Spin-orbit torque (SOT) magnetization switching is a phenomenon induced by a spin current, which is in turn generated by a charge current. Eliciting this phenomenon could help to manipulate the ...
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Spin-orbit torque hardware creates random keys and reveals unauthorized access attempts
The information exchanged by modern devices is typically protected by cryptographic techniques, approaches that convert ...
“Spin-orbit-torque (SOT) devices are promising candidates for the future magnetic memory landscape, as they promise high endurance, low read disturbance, and low read error, in comparison with ...
A team of physicists at Purdue University has built the most sensitive torque measuring device ever. In their paper published in the journal Nature Nanotechnology, the team describes their new device ...
The current induced magnetisation switching by spin-orbit torque (SOT) is an important ingredient for modern non-volatile magnetic devices such as magnetic random access memories and logic devices ...
Spin-transfer torque memory technologies employ the transfer of angular momentum from a spin-polarised current to the magnetic orientation of a nano-scale particle, enabling the reversible switching ...
ITHACA, N.Y. - Tomorrow's nonvolatile memory devices – computer memory that can retain stored information even when not powered – will profoundly change electronics, and Cornell University researchers ...
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