KAWASAKI, Japan, November 12, 2024--Toshiba's new bare die 1200V SiC MOSFET for automotive traction inverters with a new structure delivers both low On-resistance and high reliability.

Operation is again over ambients of −40 to +110°C. Applications are foreseen switching test signals in test and measurement – particularly ATE systems, and in communications equipment. G3VM-401xY2 and ...

Chicago, IL. Littelfuse Inc. has introduced its first series of silicon-carbide (SiC) MOSFETs, the latest addition to the company’s power-semiconductor line. In March, Littelfuse took an ...

The wide-bandgap double pulse test (WBG-DPT) application from Tektronix automates key validation measurements on wide bandgap devices such as SiC and GaN MOSFETs. Running on the company’s 4/5B/6B ...

In order to better understand avalanche performance across trench and planar MOSFETs as well as newer and older generations of MOSFETs and knowing that MOSFET ruggedness depends heavily on test ...

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for automotive traction inverters [2] with an ...

Omron has introduced 400V and 600V 110°C versions of its G3VM photo mos isolated electronic relay family, as well as a 40V 2Ω type in the 1.5 x 2.5 x 1.3mm 4pin VSON package. With G3VM-401xY2 and G3VM ...

Toshiba Electronic Devices & Storage Corporation Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction ...

Toshiba Starts Test-Sample Shipments of a Bare Die 1200V SiC MOSFET with Low On-Resistance and High Reliability, for Use in Automotive Traction Inverters ...