Abstract: This paper investigates single event effects in enhancement mode GaN high electron mobility transistors (HEMTs) and presents a physical mechanism for catastrophic single-event burnout (SEB).

Abstract: Pentacene organic thin-film transistors (OTFTs) with HfLaON high-k gate dielectric have been fabricated using various gate-electrode materials, including different metals (Al, Au, Cu, Cr, Ti ...

This story has been updated to include information about the Cherokee High School ribbon cutting and open house, and the new school address. +3 ...

A research team led by Professor Jae Eun Jang and Dr. Goeun Pyo from the Department of Electrical Engineering and Computer Science at DGIST has developed "dual-modulated vertically stacked transistors ...