Abstract: Heavy-ion induced latent gate damage (LGD) and single-event leakage current (SELC) related to gate damage in silicon carbide (SiC) power MOSFETs were investigated by experiment and ...
Abstract: The proposed work intends to investigate the cryogenic operation of gate all-around nanowire field-effect transistors (GAA NWFETs) for quantum conduction modes across various temperatures.
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