Abstract: Low damage atomic layer etching (ALE) gate recess is developed for fabrication of millimeter-wave AlGaN/GaN high-electron-mobility transistors (HEMTs). Plasma ion induced bombardments to the ...
Abstract: Selective laser etching (SLE) is unique technology which enables to fabricate high quality 3D structure out of various transparent materials such as glass and crystals [1] . SLE of glass ...
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