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Abstract: This article presents a series of intensity high-pass devices (IHPDs) that are designed and investigated to prevent the propagation of high-power microwaves (HPMs) in RF front-end systems.
This article is brought to you by our exclusive subscriber partnership with our sister title USA Today, and has been written by our American colleagues. It does not necessarily reflect the view of The ...
Abstract: We propose a new SiC trench MOSFET suitable for achieving both low loss and high reliability. This structure, called a VC Fin-SiC, is characterized by a fin-shaped trench, and by adopting a ...
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